Strong Tunneling in the Single-Electron Transistor
نویسندگان
چکیده
We have investigated the suppression of single-electron charging effects in metallic single-electron transistors when the conductance of the tunnel junctions becomes larger than the conductance quantum e2yh. We find that the Coulomb blockade of the conductance is progressively shifted at lower temperatures. The experimental results agree quantitatively with the available 1yT expansion at high temperature, and qualitatively with the predictions of an effective two-state model at low temperature, which predicts at T 0 a blockade of conductance for all gate voltages. [S0031-9007(97)03849-0]
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تاریخ انتشار 1997